Lam Analysis Introduces Lam Cryo™ 3.0 Cryogenic Etch Era to Boost up Scaling of 3-D NAND for the AI Age
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Lam Analysis Introduces Lam Cryo™ 3.0 Cryogenic Etch Era to Boost up Scaling of 3-D NAND for the AI Age


FREMONT, Calif., July 31, 2024 /PRNewswire/ — Lam Research Corp. (Nasdaq: LRCX) lately prolonged its management in 3-D NAND flash reminiscence etching with the creation of Lam Cryo™ 3.0, the 3rd year of the corporate’s production-proven cryogenic dielectric etch era. Because the proliferation of generative synthetic knowledge (AI) continues to propel the call for for reminiscence with upper capability and function, Lam Cryo 3.0 supplies etch functions crucial for the producing of date modern 3-D NAND. Leveraging extremely chilly temperatures, top energy confined plasma reactor era, and inventions in floor chemistry, Lam Cryo 3.0 etches with industry-leading precision and profile keep watch over.

“Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND,” stated Sesha Varadarajan, senior vice chairman of World Merchandise Team at Lam Analysis. “With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era’s key NAND manufacturing hurdles.”