NoMIS Power, a leading company in advanced silicon carbide (SiC) power semiconductor technology, has made a significant breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This advancement addresses a major challenge that has been limiting the widespread use of SiC technology in high-power applications. Short-circuit testing was carried out with the following parameters: Rg of 20 Ω, Vgs of 20 V, and Vds of 800 V.
Silicon carbide (SiC) devices are becoming more popular in power electronics due to their high efficiency, fast switching speeds, and excellent thermal performance. However, their short-circuit robustness has historically been lower than silicon-based IGBTs, posing challenges for high-voltage and high-reliability applications like industrial drives, electric vehicles, and grid systems. NoMIS Power has made significant advancements in extending the short-circuit withstand time (SCWT) of SiC MOSFETs to a minimum of 5 µs, compared to the industry standard of 2-3 µs, without negatively impacting specific on-resistance (Ron,sp).
Through proprietary SiC MOSFET fabrication design and process flow, NoMIS Power has optimized the trade-off between Ron,sp and SCWT, as shown in Figures 1 & 2. This optimization can be tailored to specific applications, offering increased reliability and performance while maintaining fault tolerance. NoMIS Power’s long SCWT devices undergo rigorous screening for defects and facilitate easier gate driver desaturation (dSat) design, enabling faster switching frequencies and improved short-circuit withstand times compared to existing SiC devices.
This advancement in SiC technology, combined with innovative packaging and thermal management techniques, has broad implications for industries like renewable energy, electric transportation, and high-power applications. The longer SCWT of SiC MOSFETs ensures rugged and reliable performance in critical applications, reducing costs and enhancing power system robustness. Enhancing SiC-Based Power Systems with NoMIS Power’s Breakthrough Technology
In the realm of power electronics, the emergence of Silicon Carbide (SiC) MOSFETs has revolutionized the landscape, offering higher efficiency and performance compared to traditional silicon-based devices. However, for applications sensitive to electromagnetic interference that require a more robust solution for detecting and acting upon short-circuit events, the reliance on digital control and sensing schemes alone may not suffice. This is where NoMIS Power’s breakthrough technology comes into play, offering a safer and more reliable option for SiC-based power converters and systems.
As the adoption of SiC accelerates, NoMIS Power’s innovative solutions are poised to make a significant impact in the industry. By providing a more effective way to utilize SiC MOSFETs with lower risk, NoMIS Power is paving the way for enhanced performance and reliability in power systems. This breakthrough will be showcased at APEC 2025 in Atlanta, GA, where attendees can learn more about the expanded range of SiC discretes and power modules offered by NoMIS Power.
NoMIS Power Corporation, established in 2020 as a spinout of the University at Albany’s College of Nanotechnology, Science, and Engineering, specializes in designing and developing cutting-edge SiC power semiconductor devices and packaging architectures. Their focus on innovation and advancement in SiC technology has positioned them as a key player in the global power electronics market.
For more information about NoMIS Power and their latest advancements in SiC technology, visit www.nomispower.com. To learn more about their breakthrough technology firsthand, be sure to stop by Booth 548 at APEC 2025.
In conclusion, NoMIS Power’s breakthrough technology offers a game-changing solution for applications requiring a higher level of reliability and safety in SiC-based power systems. By combining advanced SiC MOSFETs with innovative design and packaging architectures, NoMIS Power is at the forefront of driving efficiency and performance in the power electronics industry. Don’t miss the opportunity to explore their groundbreaking technology at APEC 2025 and discover how NoMIS Power is shaping the future of power systems.
